Professor Hui Li and post-doctoral researcher Zhehui Guo, Ph.D. recently received an award from IEEE for their solar power research paper. (M Wallheiser/FAMU-FSU Engineering)
Hui Li, an electrical and computer engineering professor at the FAMU-FSU College of Engineering, and Zhehui Guo, a postdoctoral researcher at the Center for Advanced Power Systems, have received the Second Place Prize Paper award from the Institute of Electrical and Electronic Engineers (IEEE) Transactions on Power Electronics (TPEL).
The paper outlines important advances to make modernizing the nation’s power grid a reality.
A new generation of high-voltage power semiconductors, known as SiC MOSFETs, are crucial for modernizing our electrical grid. They can handle the increased capacity and high penetration of renewable energy. However, the technology that drives these high-voltage power semiconductors presents significant challenges. Drawbacks such as low reliability, high cost and large size hinder the widespread adoption of these new devices and slow down the modernization of our grid.
“Our proposed gate driver technology revolutionizes the conventional approach by combining signals and power transmission,” Li said. “This eliminates the need for expensive fiber optic cables and minimizes the required power supply resulting in a substantial cost reduction.”
Li’s research group pushes the operating frequency of gate drivers from kilohertz (KHz) to megahertz (MHz), resulting in a tenfold reduction in the size of the unit. As a result, the gate driver can be integrated into a smaller power module, greatly enhancing its performance and reliability.
“Our research presents a groundbreaking technology to address the limitations of conventional methods,” Li explained. “By integrating signal and power transmission, it reduces cost, and we have paved the way for wider adoption of SiC MOSFETs and accelerated the modernization of our electrical grid.”
The winning paper, “A MHz-Pulse-Transformer Isolated Gate Driver with Signal-Power Integrated Transmission for Medium-Voltage SiC MOSFETs,” resulted from Guos’ doctoral work at the college and featured cutting-edge power electronics technology solutions.
“This prestigious award highlights the impactful power research conducted at FAMU-FSU College of Engineering,” Li said. “We are thrilled that our work is contributing to the advancement of the field and are grateful for the recognition received from this respected journal.”
Winners of the award will be announced at the TPEL Editorial Board Meeting during the upcoming IEEE ECCE 2023 conference in Nashville, Tennessee, on November 1, 2023.
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